3 Biasing

Q 3.1
(a)

An answer:
RB = V RB IRB V RB = V CC V BE IRB = IB V BE = 0.6V (assumption) IB = IC αfe RB = αfe(V CC 0.6) IC

(b)

An answer:
RB = V RB IRB V RB = V CC V BE IRB = IB IB = IC αfe V BE = kT q ln ( IC IC0 + 1) RB = αfe (V CC kT q ln ( IC IC0 + 1)) IC

Note that typically IC IC0 >>> 1 and hence the ”+1” can be ignored.

(c)

An answer:
a: RB = 2009.4 103 = 1.88MΩ b: Calculating V BE from the IC and IC0 yields a little different RB = 2009.43 103 = 1.89MΩ
(d)

An answer:
RB = αfe (V CC kT q ln ( IC IC0 + 1)) IC

can be rewritten as

αfe = RBIC (V CC kT q ln ( IC IC0 + 1))

which leads, with unchanged IC0, RB, V CC, T to almost a doubled αfe: αfe 400

(e)

An answer:
The equation for RB RB = αfe (V CC kT q ln ( IC IC0 + 1)) IC

can be recycled to get an answer. Note that rewriting this into IC = is hard because IC appears in the denominator and in the ln() term in the numerator. In this specific question, no exact number is required: only a larger/smaller/equal answer is requested. This can be done by e.g. assuming an answer and then verifying it or falsifying it. The impact of doubling a transistor is that:

  • the IC0effectively doubles
  • the αfe is the same

We now can verify/falsify the 3 conditions:

  • assume that IC is doubled
    In this case, ICIC0 is unchanged, and according to the equation for RB, the value for RB should be halved. This is in contradiction with having an unchanged circuit.
  • assume that IC more than doubled
    In this case, ICIC0 increases, and according to the equation for RB, the value for RB should be more-than-halved. This is in contradiction with having an unchanged circuit.
  • assumed that IC is less than doubled
    obviously, this does not have to be worked out: if 2 out of 3 possible options are false, the remaining option must be true.

Other reasoning:

  • driving the transistor(s) from a voltage source, the V BE does not change when adding a second BJT. Then the summed IC is twice the current of one BJT. This however assumes a voltage source and hence RB = 0.
  • driving the transistor(s) from a current source, the summed IB does not change and then the summed IC does not change.
  • driving the transistor(s) from a source with (positive) output resistance yields a source that is somewhere between the previous 2 ideal sources. The resulting behavior is then also between the two previously derived IC results: the total IC will be somewhat increased.

Yet another alternative reasoning is:

a)
Assuming as starting point that that the total IC and hence the total IB do not change.
b)
with the doubled IC0 and the same total IC, the V BE must be lowered by ΔV BE = kT q ln(2): numerically this is a decrease by 18 mV.
c)
the slightly decreased V BE results in a small increase in IB and hence results in a small increase in IC.

Q 3.2
(a)

An answer:
Original situation: IC2 = αfeIB2 IB2 = IE1 IE1 = (αfe + 1)IB1 IB1 = V CC V B1 Rx V B1 1.2V IC2 = αfe(αfe + 1)V CC 1.2V Rx

Modified situation:

IC2 = αfeIB2 IB2 = IE1 IE1 = V CC V B1 Rx V B1 1.2V IC2 = αfe V CC 1.2V Rx

It follows from these relations that IC2 is changed quite a lot when applying the described circuit modification.

Q 3.3

An answer:
V CE = V CC V RC = V CC IC RC IC = αfeIB IB = V CC V B RB1 V CE = V CC αfe V CC V B RB1 RC

yields:

IC = 0.84mA6.7mA RC = 1kΩ

and hence gives

V RC = 0.846.7V V CE = 8.162.3V

which is fine for biasing purposes.

Q 3.4
(a)
(b)

An answer:
Assuming the BJT satisfies iC = IC0eqvBE kT without any dependency on V CE : V C,T1 = V CC IC,T1R3 IC,T1 = αfeIB,T1 IB,T1 = V CC V B,T1 R2 V C,T1 = V CC αfe V CC V B,T1 R2 R3

(c)

An answer:
Substituting the numerical values for the various components shows that for all αfe for the specified transistor type, the voltage drop across R3 would be larger than V CC. This is in violation of the assumption on V CE. In an actual circuit, this yields V CE 0 which does not correspond to proper biasing conditions.
(d)

An answer:
0A (zero)

Q 3.5
(a)

An answer:
A MOSFET works in saturation if V DS > V GS V T .

In the circuit, there is zero current through Rg, meaning V D = V G from which it follows that V GS = V DS. Consequently, the saturation condition is always satisfied.

(b)

An answer:
RD = V RD ID = V DD V DS ID = V DD V GS ID V GS = V T + 2ID k RD = V DD V T + 2ID k ID

where the equation for V GS is a reworked version of the element equation (the square law relation).

Q 3.6


An answer:

IC1 = αfe V B1 0.6 R1 IC2 = 0

Q 3.7
(a)

An answer:

RG1 = V DD V G IRG1 V G = V GS + V S IRG1 = V DD RG1 + RG2 V GS = V T + 2IBIAS k V S = Ibias RS RG1 = V DD V T 2IBIAS k IBIAS RS V DD (RG1 + RG2) = V DD V T 2IBIAS k IBIAS RS V T + 2IBIAS k + IBIAS RS RG2

This equation can of course be rewritten in many ways.

An alternative derivation can be:

Calculating the required V G from a biasing point-of-view and from the bias network (note that the gate current is zero) and equating the two:

V G = RG2 RG1 + RG2V DD V G = V T + 2IBIAS k + IBIAS RS

Equating the two yields a proper expression for the required RG2

(b)


An answer:
Filling in the previously derived equation yields RG1 = 10kΩ

Without a) it can be done with iteratively calculating voltages and currents in the circuit, following a type of Sudoku-approach. Doing so: V S = 1V , need V GS = 4V V G = 5V , so RG1 = RG2

(c)

An answer:
Clip: V D = V DD = 10V

Saurationt: V D = V DSmin + V S = V GS V T + V S = 4 2 + 1 = 3V

Maximum swing for V D = 6.5V V RD = 3.5V , RD = 3.5kΩ

Q 3.8
(a)


An answer:

RS = V S ID V S = V G V GS ID = IBIAS V GS = V T + 2IBIAS K V G = V DD RG2 RG1 + RG2 RS = V DD RG2 RG1+RG2 V T 2IBIAS K IBIAS

(b)

An answer:

V G = 5V V GS = 3V V S = 2V RS = 2V 4mA = 500Ω

(c)

An answer:
For saturation, V DS V GS V T , and then V D V S + V GS V T V D = V DD ID RD

From these, it follows that

RD < V DDV SV GS+V T ID = 1.5kΩ

(d)


An answer:
Parallel C: no more degeneration for signals higher gain.

Parallel L to RS: more degeneration for signals lower gain.

Parallel L to RD: higher impedance for the conversion of signal current (variation in the current) to output voltage change higher gain.

Q 3.9

An answer:

IC = αfe αfe + 1IE IE = V E R4 V E = V DD IBR1 V BE IB = IC αfe

back substitution and separation of variables yield

IC = αfe αfe + 1 V DD IC αfeR1 V BE R4 = αfe αfe + 1 V DD V BE R4 + R1 αfe+1

Q 3.10
(a)


An answer:
With the assumptions described in the hint (ignore base current of the proceeding stage) a derivation could be as shown below. Note that the supply voltage in this particular circuit is denoted as V B1...

IC2 = αfe αfe + 1IE2 IE2 = V E2 RE2 V E2 = V B2 V BE2 V B2 = V B1 RB21 RB21 + RB22 IB2 RB21RB22 RB21 + RB22 IB2 = IC2 αfe IC2 = αfe αfe + 1 V B1 RB21 RB21+RB22 IC2 αfe RB21RB22 RB21+RB22 V BE2 RE2 = αfe αfe + 1 V B1 RB21 RB21+RB22 V BE2 RE2 + 1 αfe+1 RB21RB22 RB21+RB22

Also V E2 = αfe+1 αfe IC2RE2

For the derivation of IC3:

IC3 = αfe αfe + 1IE3 IE3 = V E3 RE3 V E3 = V E2 V BE3 IC3 = αfe αfe + 1 V E2 V BE3 RE3

Where you may substitute the earlier found relation for V E2.

(b)


An answer:

IC2 2.05mA IC3 1.6mA

(c)

An answer:
This relates to small signal properties, in this case to voltage gain of the stages. See therefore chapters 4 and 5.

R9 is decoupled because any (signal induced) change in the base voltage appears in full across V BE of Q3 which results in maximum sensitivity. For biasing purposes, the circuit should be insensitive to changes: at DC we want to have a relatively high ohmic emitter series resistance.

If R6 would be similarly decoupled there would be no signal present at the base of Q3. Then the voltage gain of the stage with Q3 would be zero.

Q 3.11

An answer:
IC = αfe αfe + 1IE IE = V E R6 V E = V B V BE V B = V CC R4 + R5 R3 + R4 + R5 IB (R4 + R5) R3 R3 + R4 + R5 IC = αfe αfe + 1 V CC R4+R5 R3+R4+R5 0.6V R6 + 1 αfe+1 (R4+R5)R3 R3+R4+R5

In this question, letting αfe from the start:

IC = IE IE = V E R6 V E = V B V BE V B = V CC R4 + R5 R3 + R4 + R5 IC = V CC R4+R5 R3+R4+R5 0.6V R6

Q 3.12

An answer:
IC = αfe αfe + 1 V E R4 V E = V B V BE V B = V CC R2 R1 + R2 (R!R2) IB IB = IC αfe IC = αfe αfe + 1 V CC R2 R1+R2 R!R2 IC αfe V BE R4 = αfe αfe + 1 V CC R2 R1+R2 V BE R4 + 1 αfe+1 R!R2

Substituting the numerical values yields IC = 0 because V B 0. Most likely R2 should be 330kΩ.

Q 3.13

An answer:
IC = αfe IB IB = V C 0.6 R2 V C = V CC R3 (IC + IB) IC = αfe V CC R3 ICαfe+1 αfe 0.6 R2 = αfe V CC 0.6 R2 + (αfe + 1)R3 3mA