Exercise 3.1 Biasing a circuit with an NPN

a)

An answer:
RB = V RB IRB V RB = V CC V BE IRB = IB V BE = 0.6V (assumption) IB = IC βfe RB = βfe(V CC 0.6) IC

b)

An answer:
RB = V RB IRB V RB = V CC V BE IRB = IB IB = IC βfe V BE = kT q ln ( IC IC0 + 1) RB = βfe (V CC kT q ln ( IC IC0 + 1)) IC

Note that typically IC IC0 >>> 1 and hence the ”+1” can be ignored.

c)

An answer:
a: RB = 2009.4 103 = 1.88MΩ b: Calculating V BE from the IC and IC0 yields a little different RB = 2009.43 103 = 1.89MΩ
d)

An answer:
RB = βfe (V CC kT q ln ( IC IC0 + 1)) IC

can be rewritten as

βfe = RBIC (V CC kT q ln ( IC IC0 + 1))

which leads, with unchanged IC0, RB, V CC, T to almost a doubled βfe: βfe 400

e)

An answer:
The equation for RB RB = βfe (V CC kT q ln ( IC IC0 + 1)) IC

can be recycled to get an answer. Note that rewriting this into IC = is hard because IC appears in the denominator and in the ln() term in the numerator. In this specific question, no exact number is required: only a larger/smaller/equal answer is requested. This can be done by e.g. assuming an answer and then verifying it or falsifying it. The impact of doubling a transistor is that:

We now can verify/falsify the 3 conditions:

Other reasoning:

Yet another alternative reasoning is:

a)
Assuming as starting point that that the total IC and hence the total IB do not change.
b)
with the doubled IC0 and the same total IC, the V BE must be lowered by ΔV BE = kT q ln(2): numerically this is a decrease by 18 mV.
c)
the slightly decreased V BE results in a small increase in IB and hence results in a small increase in IC.